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1 tga2706-sm april 2010 ? rev b triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com datasheet subject to change without notice. primary applications product description key features measured performance 2 watt c-band packaged power amplifier the triquint tga2706-sm is a packaged 2 watt power amplifier for c-band applications. the part is designed using triquint?s proven standard 0.5um e/d phemt production process. the tga2706-sm provides a nominal 34 dbm of output power at an input power level of 12 dbm with a small signal gain of 31 db. nominal toi is 42 dbm and noise figure is 7 db. the tga2706-sm is a qfn 5x5 mm surface mount package. it is ideally suited for low cost emerging markets such as point to point radio and communications. lead-free & rohs compliant. evaluation boards are available upon request. ? frequency range: 5.5 ? 8.5 ghz ? power: 34 dbm psat, 32 dbm p1db ? gain: 31 db ? toi: 42 dbm ? nf: 7 db ? bias: vd = 6 v, id = 1.26 a, vg = +0.6 v typical ? package dimensions: 5 x 5 x 0.85 mm ? point-to-point radio ? communications bias conditions: vd = 6 v, id = 1.26 a, vg = +0.6 v typical
2 tga2706-sm april 2010 ? rev b triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table i absolute maximum ratings 1/ 1/ these ratings represent the maximum operable va lues for this device. stresses beyond those listed under ?absolute maximum ratings? may cause per manent damage to the device and / or affect device lifetime. these are stress ratings only, and functional operation of the device at these conditions is not implied. 2/ combinations of supply voltage, supply current , input power, and output power shall not exceed pd (as listed in ?thermal information?). symbol parameter value notes vd-vg drain to gate voltage 16 v vd drain voltage 13 v 2/ vg gate voltage range -0.65 to +2 v id drain current 2.7 a 2/ ig gate current range -16 to 120ma pin input continuous wave power 26 dbm 2/ table ii recommended operating conditions symbol parameter 1/ value vd drain voltage 6 v idq drain current 1.26 a id_drive drain current under rf drive 1.7 a vg gate voltage +0.6 v 1/ see assembly diagram for bias instructions.
3 tga2706-sm april 2010 ? rev b triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com symbol parameter test conditions nominal units gain small signal gain f = 5.5 ? 8.5 ghz 31 db irl input return loss f = 5.5 ? 8.5 ghz -12 db orl output return loss f = 5.5 ? 8.5 ghz -15 db psat saturated output power f = 5.5 ? 8.5 ghz 34 dbm p1db output power @ 1db compression f = 5.5 ? 8.5 ghz 32 dbm toi output toi f = 5.5 ? 8.5 ghz 42 dbm nf noise figure f = 5.5 ? 8.5 ghz 7 db gain temperature coefficient f = 5.5 ? 8.5 ghz -0.03 db/c power temperature coefficient f = 5.5 ? 8.5 ghz -0.015 dbm/c table iii rf characterization table bias: vd = 6 v, id = 1.26 a, vg = +0.6 v typical
4 tga2706-sm april 2010 ? rev b triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com parameter test conditions value maximum power dissipation tbaseplate = 85 c pd = 15 w tchannel = 200 c thermal resistance, jc vd = 6 v id = 1.26 a pd = 7.56 w tbaseplate = 85 oc jc = 7.7 c/w tchannel = 143 c tm = 1.3e+8 hrs thermal resistance, jc under rf drive vd = 6 v id = 1.7 a pout = 34 dbm pd = 7.7 w tbaseplate = 85 oc jc = 7.7 c/w tchannel = 144 c tm = 1.1e+8 hrs mounting temperature 30 seconds 320 c storage temperature -65 to 150 c table iv power dissipation and thermal properties median lifetime (tm) vs. channel temperature
5 tga2706-sm april 2010 ? rev b triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com measured data bias conditions: vd = 6 v, id = 1.26 a, vg = +0.6 v typical
6 tga2706-sm april 2010 ? rev b triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com measured data bias conditions: vd = 6 v, id = 1.26 a, vg = +0.6 v typical
7 tga2706-sm april 2010 ? rev b triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com measured data bias conditions: vd = 6 v, id = 1.26 a, vg = +0.6 v typical
8 tga2706-sm april 2010 ? rev b triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com measured data bias conditions: vd = 6 v, id = 1.26 a, vg = +0.6 v typical
9 tga2706-sm april 2010 ? rev b triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com measured data bias conditions: vd = 6 v, id = 1.26 a, vg = +0.6 v typical
10 tga2706-sm april 2010 ? rev b triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com measured data bias conditions: varies
11 tga2706-sm april 2010 ? rev b triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com measured data bias conditions: varies
12 tga2706-sm april 2010 ? rev b triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com electrical schematic bias procedures bias-up procedure bias-down procedure vg set to 0 v turn off rf supply vd_set to +6 v reduce vg to 0 v. ensure id ~ 0 ma adjust vg more positive until idq is 1.26 a. this will be ~ vg = +0.6 v turn vd to 0 v rf output rf input tga2706-sm vg3 vg1_top vd1_top vd3_bottom vg1_bottom vd3_top vd1_bottom 3 24 7 10 16 11 20 9 21
13 tga2706-sm april 2010 ? rev b triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com package pinout pin description 3 rf input 7, 24 vg1 9, 21 vd1 10 vg3 11, 20 vd3 16 rf output 25 ground 1, 2, 4, 5, 6, 8, 12, 13, 14, 15, 17, 18, 22, 23 n/c pin #1 dot
14 tga2706-sm april 2010 ? rev b triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. mechanical drawing units: millimeters pkg x, y, z size tolerance: +/- 0.050
15 tga2706-sm april 2010 ? rev b triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com part description c1, c2, c7, c8 1 uf capacitor (1206) c3, c4, c5, c6 0.01 uf capacitor (0603) gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. recommended assembly board board is 10mil thick ro4350 with 0.5oz copper cladding. board is mounted on metal block and adequate heatsinking with fan is required. rfin rfout c4 c1 c2 c3 c5 c6 c7 c8 vg1 vd1 vg3 vd3 vg1 vd1 vd3 vdet vd vg 6v 1.26a +0.6v typical
16 tga2706-sm april 2010 ? rev b triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. assembly notes recommended surface mount package assembly ? proper esd precautions must be followed while handling packages. ? clean the board with acetone. rinse with alc ohol. allow the circuit to fully dry. ? triquint recommends using a conductive solder pas te for attachment. follow solder paste and reflow oven vendors? recommendations when dev eloping a solder reflow profile. typical solder reflow profiles are listed in the table below. ? hand soldering is not recommended. solder paste can be applied using a stencil printer or dot placement. the volume of solder paste depends on pcb and component layout and should be well controlled to ensure consistent me chanical and electrical performance. ? clean the assembly with alcohol. typical solder reflow profiles reflow profile snpb pb free ramp-up rate 3 c/sec 3 c/sec activation time and temperature 60 ? 120 sec @ 140 ? 160 c 60 ? 180 sec @ 150 ? 200 c time above melting point 60 ? 150 sec 60 ? 150 sec max peak temperature 240 c 260 c time within 5 c of peak temperature 10 ? 20 sec 10 ? 20 sec ramp-down rate 4 ? 6 c/sec 4 ? 6 c/sec ordering information part package style tga2706-sm qfn 5x5 surface mount

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